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MCFF > MFF>Equipment> Sputter Tool - 8 inch

Equipment

Sputter Tool - 8 inch
8 Inch Sputtering
Steps involved in sputtering,
In this example we deposit oxide and chrome on a silicon wafer using Perkin Elmer sputtering tool located in M&M 432.

Before switching on the power to the RF source and the tuning network, check the pressure in the chamber (this assumes that the system is idea ling).
The pressure in the chamber should read around 5-7x10*(-7). Once this is obtained we are ready to deposit.

Now switch on the RF source and the tuning network wait for few seconds to warm up the RF source and the tuning network.

The Tuning network:

To tune the tuning network first look at the series capacitor and the shunt capacitor.
In order to perform Etch the values for the tuning network should be as follows.

Series Capacitor: 5
Shunt Capacitor: 45

Then for deposition the values should be.

Series Capacitor: 25
Shunt Capacitor: 80

For tuning, change these values and look at the reflected power on the RF source, the reflected power should be close to zero.

Close throttle value, and open the gas value.

Step 1.
Clean the wafer using Etch.

The position of the knobs on the panel of the system should look like this as explained below.


Turn on the gas supply for argon gas, and adjust the mass flow meter to the value of 15 sccm. Now go ahead and tune the tuning network.
Tuning network as shown for etch 5,45. The rf power should be around 1000. Maintain this for about 5min and the cleaning of the wafer is done.
After this step decrease the RF power to zero and follow the next step.

Step2.
Pre sputtering:


The position of the knobs on the panel of the system should look like this as explained below.


Turn on the gas supply for oxygen gas, and adjust the mass flow meter to the value of 11 sccm (for argon) and 2 sccm (for oxygen). Now go ahead and tune the tuning network.
Tuning network as shown for deposition 25,80. The RF power should be around 900-950 where there is no flicker in the chamber and the RF value stabalises.mmintain this for about 5min and the pre sputtering is done.
After this step decrease the RF power to zero and follow the next step.

Step3.
Oxide deposition:

The position of the knobs on the panel of the system should look like this as explained below.


Maintain the gas flow meter readings, which we used in step2.
Now go ahead and tune the tuning network.
Tuning network as shown for deposition 25,80. The RF power should be around 900-950 where there is no flicker in the chamber and the RF value stabalises maintain this for about 60 min (for ~1 hr deposition) and the deposition is done.
After this step decrease the RF power to zero and follow the next step.

Turn off the oxygen supply


Step4.
Pre sputtering of chrome target:

The position of the knobs on the panel of the system should look like this as explained below.

 


Maintain the gas flow meter for the argon gas to read 11 again no oxygen in this case.
Now go ahead and tune the tuning network.
Tuning network as shown for deposition 25,80. The RF power should be around 700 where there is no flicker in the chamber and the RF value stabalises maintain this for about 5min and the pre sputtering is done.
After this step decrease the RF power to zero and follow the next step.

Step5.
Chrome deposition:

The position of the knobs on the panel of the system should look like this as explained below.


Maintain the gas flow meter readings, which we used in step4.
Now go ahead and tune the tuning network.
Tuning network as shown for deposition 25,80. The RF power should be around 800 where there is no flicker in the chamber and the RF value stabilizes. Maintain this for about 60 min (for ~1 hr deposition) and the chrome deposition is done.
After this step decrease the RF power to zero and follow the next step.

The deposition is done at this stage; the next step would be the removal of the sample from the chamber.

Follow the procedure for venting the chamber.


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Microfabrication Facility
Michigan Technological University

436 Minerals and Materials
Building
1400 Townsend Drive
Houghton, MI 49931-1295
906 369-2662(voice)
906 487-2949 (fax)
William Knudsen, Director
wknudsen@mtu.edu